amphenol代理商
專業(yè)銷售Amphenol（安費諾）全系列產(chǎn)品-英國2號倉庫
美國1號分類選型新加坡2號分類選型英國10號分類選型英國2號分類選型日本5號分類選型

在本站結(jié)果里搜索：    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

SKM300GB125D - 

N-Channel IGBT; 1200 V; 300 A @ DegC; 20 V; Case D 56

SEMIKRON SKM300GB125D
聲明：圖片僅供參考，請以實物為準(zhǔn)！
制造商產(chǎn)品編號：
SKM300GB125D
倉庫庫存編號：
70098225
技術(shù)數(shù)據(jù)表：
View SKM300GB125D Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認(rèn)好實時在庫數(shù)量，謝謝合作！

SKM300GB125D產(chǎn)品概述

N-Channel, 1200 V Collector-to-Emitter Voltage, Ultra Fast Insulated Gate Bipolar Transistor Module
  • homogeneous Si structure (NPT - Non punch-through IGBT)
  • Low inductance case
  • Short low tail current with low temperature dependence
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using DCB Direct Copper Bonding technology
  • Large clearance (1
    For switched mode power supplies, resonant inverters up to 100 kHz, silent AC motor speed control, inductive heating, silent UPS uninterruptible power supplies, electronic welders applications.

    • SKM300GB125D產(chǎn)品信息

      Brand/Series  IGBT Series  
      Capacitance, Gate  18 nF  
      Capacitance, Input  18 nF (Typ.)  
      Channel Type  N  
      Configuration  Dual  
      Current, Collector  300 A  
      Current, Continuous Collector  300 A  
      Dimensions  106.4 x 61.4 x 30.5 mm  
      Energy Rating  16 mJ  
      Height  1.201" (30.5mm)  
      Inductance, Collector to Emitter  20 nH  
      Length  4.188" (106.4mm)  
      Mounting Type  Screw  
      Number of Pins  7  
      Package Type  D 56  
      Polarity  N-Channel  
      Primary Type  Si  
      Resistance, Collector to Emitter  9 Milliohms (Typ.)  
      Resistance, Thermal  0.075 K?W (Max.) (Junction-Case)  
      Resistance, Thermal, Junction to Case  0.075 K/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -40 °C  
      Temperature, Operating, Range  -40 to +150 °C  
      Time, Turn-Off  460 ns  
      Time, Turn-On  130 ns  
      Transistor Type  IGBT  
      Type  Ultrafast  
      Voltage, Collector to Emitter  1200 V  
      Voltage, Collector to Emitter Shorted  1200 V  
      Voltage, Gate to Emitter  ±20 V  
      Voltage, Gate to Emitter Threshold  5.5 V (Typ.)  
      Width  2.417" (61.4mm)  
    關(guān)鍵詞         

    SKM300GB125D相關(guān)搜索

    Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 18 nF  SEMIKRON Capacitance, Gate 18 nF  IGBT Transistor Modules Capacitance, Gate 18 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 18 nF   Capacitance, Input 18 nF (Typ.)  SEMIKRON Capacitance, Input 18 nF (Typ.)  IGBT Transistor Modules Capacitance, Input 18 nF (Typ.)  SEMIKRON IGBT Transistor Modules Capacitance, Input 18 nF (Typ.)   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 300 A  SEMIKRON Current, Collector 300 A  IGBT Transistor Modules Current, Collector 300 A  SEMIKRON IGBT Transistor Modules Current, Collector 300 A   Current, Continuous Collector 300 A  SEMIKRON Current, Continuous Collector 300 A  IGBT Transistor Modules Current, Continuous Collector 300 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 300 A   Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 30.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm   Energy Rating 16 mJ  SEMIKRON Energy Rating 16 mJ  IGBT Transistor Modules Energy Rating 16 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 16 mJ   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Inductance, Collector to Emitter 20 nH  SEMIKRON Inductance, Collector to Emitter 20 nH  IGBT Transistor Modules Inductance, Collector to Emitter 20 nH  SEMIKRON IGBT Transistor Modules Inductance, Collector to Emitter 20 nH   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Package Type D 56  SEMIKRON Package Type D 56  IGBT Transistor Modules Package Type D 56  SEMIKRON IGBT Transistor Modules Package Type D 56   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Collector to Emitter 9 Milliohms (Typ.)  SEMIKRON Resistance, Collector to Emitter 9 Milliohms (Typ.)  IGBT Transistor Modules Resistance, Collector to Emitter 9 Milliohms (Typ.)  SEMIKRON IGBT Transistor Modules Resistance, Collector to Emitter 9 Milliohms (Typ.)   Resistance, Thermal 0.075 K?W (Max.) (Junction-Case)  SEMIKRON Resistance, Thermal 0.075 K?W (Max.) (Junction-Case)  IGBT Transistor Modules Resistance, Thermal 0.075 K?W (Max.) (Junction-Case)  SEMIKRON IGBT Transistor Modules Resistance, Thermal 0.075 K?W (Max.) (Junction-Case)   Resistance, Thermal, Junction to Case 0.075 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.075 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.075 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.075 K/W   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Turn-Off 460 ns  SEMIKRON Time, Turn-Off 460 ns  IGBT Transistor Modules Time, Turn-Off 460 ns  SEMIKRON IGBT Transistor Modules Time, Turn-Off 460 ns   Time, Turn-On 130 ns  SEMIKRON Time, Turn-On 130 ns  IGBT Transistor Modules Time, Turn-On 130 ns  SEMIKRON IGBT Transistor Modules Time, Turn-On 130 ns   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Ultrafast  SEMIKRON Type Ultrafast  IGBT Transistor Modules Type Ultrafast  SEMIKRON IGBT Transistor Modules Type Ultrafast   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)  
    電話:400-900-3095
    QQ:800152669
    關(guān)于我們 | Amphenol簡介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊 | 付款方式 | 聯(lián)系我們
    Copyright © 2017 orender.cn All Rights Reserved. 技術(shù)支持：電子元器件 ICP備案證書號:粵ICP備11103613號