Brand/Series |
IGBT Series |
|
Capacitance, Gate |
10 nF |
|
Capacitance, Input |
10 nF (Typ.) |
|
Channel Type |
N |
|
Configuration |
Dual |
|
Current, Collector |
200 A |
|
Current, Continuous Collector |
200 A |
|
Dimensions |
106.4 x 61.4 x 30.5 mm |
|
Energy Rating |
14 mJ |
|
Height |
1.201" (30.5mm) |
|
Inductance, Collector to Emitter |
20 nH |
|
Length |
4.188" (106.4mm) |
|
Mounting Type |
Screw |
|
Number of Pins |
7 |
|
Package Type |
D 56 |
|
Polarity |
N-Channel |
|
Primary Type |
Si |
|
Resistance, Collector to Emitter |
12 Milliohms (Typ.) |
|
Resistance, Thermal |
0.09 K?W (Max.) (Junction-Case) |
|
Resistance, Thermal, Junction to Case |
0.09 K/W |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-40 °C |
|
Temperature, Operating, Range |
-40 to +150 °C |
|
Time, Turn-Off |
420 ns |
|
Time, Turn-On |
75 ns |
|
Transistor Type |
IGBT |
|
Type |
Ultrafast |
|
Voltage, Collector to Emitter |
1200 V |
|
Voltage, Collector to Emitter Shorted |
1200 V |
|
Voltage, Gate to Emitter |
±20 V |
|
Voltage, Gate to Emitter Threshold |
5.5 V (Typ.) |
|
Width |
2.417" (61.4mm) |
|
關(guān)鍵詞 |