VBT1045BP-E3/4W -

Semiconductor, Rectifier; Trench MOS Barrier Schottky, Single; 45V; 10A; TO-263AB

聲明：圖片僅供參考，請以實物為準！

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

Features:

Trench MOS Schottky Technology

Low Forward Voltage Drop, Low Power Losses

High Efficiency Operation

Meets MSL level 1, per J-STD-020, LF maximum Peak of 245°C

Compliant to RoHS Directive 2011/65/EU
Applications:

For Use in Solar Cell Junction Box as a Bypass Diode for Protection, Using DC Forward Current without Reverse Bias

Brand/Series	TMBS Series
Configuration	Single
Current, Forward, Continuous	10 A
Current, On-State, Non-Repetitive Peak	100 A
Current, Peak	500 μA
Current, Reverse	500 μa
Current, Surge	100 A
Dimensions	10.45 x 4.83 x 9.14 mm
Diode Type	Schottky
Height	0.36" (9.14mm)
Length	0.411" (10.45mm)
Mounting Type	Through Hole
Number of Pins	2
Package Type	TO-263AB
Primary Type	Rectifier
Resistance, Thermal, Junction to Case	3 °C/W
Temperature, Operating	-40 TO 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-40 °C
Temperature, Operating, Range	-40 to +150 °C
Voltage, Forward	0.68 V
Voltage, Repetitive Peak	45 V
Width	0.19" (4.83mm)
關(guān)鍵詞