Brand/Series | SI49 Series | |
Channel Mode | Enhancement | |
Channel Type | P | |
Configuration | Dual Gate, Dual Source, Quad Drain | |
Current, Drain | -2.4 A | |
Dimensions | 5 x 4 x 1.55 mm | |
Gate Charge, Total | 5.8 nC | |
Height | 0.061" (1.55mm) | |
Length | 0.196" (5mm) | |
Mounting Type | Surface Mount | |
Number of Elements per Chip | 2 | |
Number of Pins | 8 | |
Package Type | SO-8 | |
Polarization | P-Channel | |
Power Dissipation | 1.2 W | |
Resistance, Drain to Source On | 0.135 Ω | |
Temperature, Operating | -55 to 150 °C | |
Temperature, Operating, Maximum | +150 °C | |
Temperature, Operating, Minimum | -55 °C | |
Temperature, Operating, Range | -55 to +150 °C | |
Thermal Resistance, Junction to Ambient | 87 °C/W | |
Time, Turn-Off Delay | 21 ns | |
Time, Turn-On Delay | 8 ns | |
Transconductance, Forward | 5 S | |
Typical Gate Charge @ Vgs | 5.8 nC @ -5 V | |
Voltage, Breakdown, Drain to Source | -30 V | |
Voltage, Drain to Source | -30 V | |
Voltage, Forward, Diode | -1.2 V | |
Voltage, Gate to Source | ±20 V | |
Width | 0.157" (4mm) | |
關(guān)鍵詞 |