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SI1021R-T1-GE3 - 

60V (D-S) P-CH MOSFET W/ESD PROTECT

Siliconix / Vishay SI1021R-T1-GE3
聲明：圖片僅供參考，請以實物為準(zhǔn)！
制造商產(chǎn)品編號：
SI1021R-T1-GE3
倉庫庫存編號：
70026180
技術(shù)數(shù)據(jù)表：
View SI1021R-T1-GE3 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認(rèn)好實時在庫數(shù)量，謝謝合作！

SI1021R-T1-GE3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI1021R-T1-GE3產(chǎn)品信息

      Brand/Series  SI10 Series  
      Capacitance, Input  23 pF @ -25 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  -135 A  
      Dimensions  1.68 x 0.86 x 0.8 mm  
      Gate Charge, Total  1.7 nC  
      Height  0.031" (0.8mm)  
      Length  0.066" (1.68mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  SC-75A  
      Polarization  P-Channel  
      Power Dissipation  250 mW  
      Resistance, Drain to Source On  8 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  35 ns  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  80 mS  
      Typical Gate Charge @ Vgs  1.7 nC @ -30 V  
      Voltage, Breakdown, Drain to Source  -60 V  
      Voltage, Drain to Source  -60 V  
      Voltage, Forward, Diode  80 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.034" (0.86mm)  
    關(guān)鍵詞         

    SI1021R-T1-GE3相關(guān)搜索

    Brand/Series SI10 Series  Siliconix / Vishay Brand/Series SI10 Series  MOSFET Transistors Brand/Series SI10 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI10 Series   Capacitance, Input 23 pF @ -25 V  Siliconix / Vishay Capacitance, Input 23 pF @ -25 V  MOSFET Transistors Capacitance, Input 23 pF @ -25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 23 pF @ -25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -135 A  Siliconix / Vishay Current, Drain -135 A  MOSFET Transistors Current, Drain -135 A  Siliconix / Vishay MOSFET Transistors Current, Drain -135 A   Dimensions 1.68 x 0.86 x 0.8 mm  Siliconix / Vishay Dimensions 1.68 x 0.86 x 0.8 mm  MOSFET Transistors Dimensions 1.68 x 0.86 x 0.8 mm  Siliconix / Vishay MOSFET Transistors Dimensions 1.68 x 0.86 x 0.8 mm   Gate Charge, Total 1.7 nC  Siliconix / Vishay Gate Charge, Total 1.7 nC  MOSFET Transistors Gate Charge, Total 1.7 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 1.7 nC   Height 0.031" (0.8mm)  Siliconix / Vishay Height 0.031" (0.8mm)  MOSFET Transistors Height 0.031" (0.8mm)  Siliconix / Vishay MOSFET Transistors Height 0.031" (0.8mm)   Length 0.066" (1.68mm)  Siliconix / Vishay Length 0.066" (1.68mm)  MOSFET Transistors Length 0.066" (1.68mm)  Siliconix / Vishay MOSFET Transistors Length 0.066" (1.68mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type SC-75A  Siliconix / Vishay Package Type SC-75A  MOSFET Transistors Package Type SC-75A  Siliconix / Vishay MOSFET Transistors Package Type SC-75A   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 250 mW  Siliconix / Vishay Power Dissipation 250 mW  MOSFET Transistors Power Dissipation 250 mW  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 mW   Resistance, Drain to Source On 8 Ω  Siliconix / Vishay Resistance, Drain to Source On 8 Ω  MOSFET Transistors Resistance, Drain to Source On 8 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 8 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 35 ns  Siliconix / Vishay Time, Turn-Off Delay 35 ns  MOSFET Transistors Time, Turn-Off Delay 35 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 35 ns   Time, Turn-On Delay 20 ns  Siliconix / Vishay Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 80 mS  Siliconix / Vishay Transconductance, Forward 80 mS  MOSFET Transistors Transconductance, Forward 80 mS  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 80 mS   Typical Gate Charge @ Vgs 1.7 nC @ -30 V  Siliconix / Vishay Typical Gate Charge @ Vgs 1.7 nC @ -30 V  MOSFET Transistors Typical Gate Charge @ Vgs 1.7 nC @ -30 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 1.7 nC @ -30 V   Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  Siliconix / Vishay Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode 80 V  Siliconix / Vishay Voltage, Forward, Diode 80 V  MOSFET Transistors Voltage, Forward, Diode 80 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 80 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.034" (0.86mm)  Siliconix / Vishay Width 0.034" (0.86mm)  MOSFET Transistors Width 0.034" (0.86mm)  Siliconix / Vishay MOSFET Transistors Width 0.034" (0.86mm)  
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