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PZT2907AT1G - 

TRANSISTOR, SWITCHING; NPN; -60; -60; -5.0; -600 COLLECTOR; 1.5W; 100 HFE MIN.

ON Semiconductor PZT2907AT1G
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制造商產(chǎn)品編號:
PZT2907AT1G
倉庫庫存編號:
70099570
技術(shù)數(shù)據(jù)表:
View PZT2907AT1G Datasheet Datasheet
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PZT2907AT1G產(chǎn)品信息

  Brand/Series  PZT Series  
  Configuration  Common Base  
  Current, Collector  -600 mA  
  Current, Gain  50  
  Dimensions  6.70 x 3.70 x 1.65 mm  
  Frequency, Operating  200 MHz  
  Height  0.065" (1.65mm)  
  Length  0.263" (6.7mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  4  
  Package Type  SOT-223  
  Polarity  PNP  
  Power Dissipation  1.5 W  
  Primary Type  Si  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  PNP  
  Type  Switching  
  Voltage, Breakdown, Collector to Emitter  -60 V  
  Voltage, Collector to Base  -60 V  
  Voltage, Collector to Emitter  -60 V  
  Voltage, Collector to Emitter, Saturation  -1.6 V  
  Voltage, Emitter to Base  -5 V  
  Voltage, Saturation, Base to Emitter  -2.6 V  
  Width  0.146" (3.7mm)  
關(guān)鍵詞         

PZT2907AT1G相關(guān)搜索

Brand/Series PZT Series  ON Semiconductor Brand/Series PZT Series  Bipolar Transistors Brand/Series PZT Series  ON Semiconductor Bipolar Transistors Brand/Series PZT Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector -600 mA  ON Semiconductor Current, Collector -600 mA  Bipolar Transistors Current, Collector -600 mA  ON Semiconductor Bipolar Transistors Current, Collector -600 mA   Current, Gain 50  ON Semiconductor Current, Gain 50  Bipolar Transistors Current, Gain 50  ON Semiconductor Bipolar Transistors Current, Gain 50   Dimensions 6.70 x 3.70 x 1.65 mm  ON Semiconductor Dimensions 6.70 x 3.70 x 1.65 mm  Bipolar Transistors Dimensions 6.70 x 3.70 x 1.65 mm  ON Semiconductor Bipolar Transistors Dimensions 6.70 x 3.70 x 1.65 mm   Frequency, Operating 200 MHz  ON Semiconductor Frequency, Operating 200 MHz  Bipolar Transistors Frequency, Operating 200 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 200 MHz   Height 0.065" (1.65mm)  ON Semiconductor Height 0.065" (1.65mm)  Bipolar Transistors Height 0.065" (1.65mm)  ON Semiconductor Bipolar Transistors Height 0.065" (1.65mm)   Length 0.263" (6.7mm)  ON Semiconductor Length 0.263" (6.7mm)  Bipolar Transistors Length 0.263" (6.7mm)  ON Semiconductor Bipolar Transistors Length 0.263" (6.7mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 4  ON Semiconductor Number of Pins 4  Bipolar Transistors Number of Pins 4  ON Semiconductor Bipolar Transistors Number of Pins 4   Package Type SOT-223  ON Semiconductor Package Type SOT-223  Bipolar Transistors Package Type SOT-223  ON Semiconductor Bipolar Transistors Package Type SOT-223   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 1.5 W  ON Semiconductor Power Dissipation 1.5 W  Bipolar Transistors Power Dissipation 1.5 W  ON Semiconductor Bipolar Transistors Power Dissipation 1.5 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type Switching  ON Semiconductor Type Switching  Bipolar Transistors Type Switching  ON Semiconductor Bipolar Transistors Type Switching   Voltage, Breakdown, Collector to Emitter -60 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter -60 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter -60 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter -60 V   Voltage, Collector to Base -60 V  ON Semiconductor Voltage, Collector to Base -60 V  Bipolar Transistors Voltage, Collector to Base -60 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base -60 V   Voltage, Collector to Emitter -60 V  ON Semiconductor Voltage, Collector to Emitter -60 V  Bipolar Transistors Voltage, Collector to Emitter -60 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter -60 V   Voltage, Collector to Emitter, Saturation -1.6 V  ON Semiconductor Voltage, Collector to Emitter, Saturation -1.6 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation -1.6 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation -1.6 V   Voltage, Emitter to Base -5 V  ON Semiconductor Voltage, Emitter to Base -5 V  Bipolar Transistors Voltage, Emitter to Base -5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base -5 V   Voltage, Saturation, Base to Emitter -2.6 V  ON Semiconductor Voltage, Saturation, Base to Emitter -2.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter -2.6 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter -2.6 V   Width 0.146" (3.7mm)  ON Semiconductor Width 0.146" (3.7mm)  Bipolar Transistors Width 0.146" (3.7mm)  ON Semiconductor Bipolar Transistors Width 0.146" (3.7mm)  
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