amphenol代理商
專業(yè)銷售Amphenol(安費諾)全系列產(chǎn)品-英國2號倉庫
美國1號分類選型新加坡2號分類選型英國10號分類選型英國2號分類選型日本5號分類選型

在本站結(jié)果里搜索:    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

MJD32CG - 

ON Semi MJD32CG PNP Bipolar Transistor, 3 A, 100 V, 3-Pin DPAK

ON Semiconductor MJD32CG
聲明:圖片僅供參考,請以實物為準!
制造商產(chǎn)品編號:
MJD32CG
倉庫庫存編號:
70100597
技術(shù)數(shù)據(jù)表:
View MJD32CG Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時更新,下單前請與銷售人員確認好實時在庫數(shù)量,謝謝合作!

MJD32CG產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  3 A  
  Current, Gain  10  
  Dimensions  6.73 x 6.22 x 2.38 mm  
  Frequency, Operating  3 MHz  
  Height  0.094" (2.38mm)  
  Length  0.264" (6.73mm)  
  Material  Si  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  DPAK  
  Polarity  PNP  
  Power Dissipation  15 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  8.3 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  PNP  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  1.2 V  
  Voltage, Emitter to Base  5 V  
  Width  0.245" (6.22mm)  
關(guān)鍵詞         

MJD32CG相關(guān)搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 3 A  ON Semiconductor Current, Collector 3 A  Bipolar Transistors Current, Collector 3 A  ON Semiconductor Bipolar Transistors Current, Collector 3 A   Current, Gain 10  ON Semiconductor Current, Gain 10  Bipolar Transistors Current, Gain 10  ON Semiconductor Bipolar Transistors Current, Gain 10   Dimensions 6.73 x 6.22 x 2.38 mm  ON Semiconductor Dimensions 6.73 x 6.22 x 2.38 mm  Bipolar Transistors Dimensions 6.73 x 6.22 x 2.38 mm  ON Semiconductor Bipolar Transistors Dimensions 6.73 x 6.22 x 2.38 mm   Frequency, Operating 3 MHz  ON Semiconductor Frequency, Operating 3 MHz  Bipolar Transistors Frequency, Operating 3 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 3 MHz   Height 0.094" (2.38mm)  ON Semiconductor Height 0.094" (2.38mm)  Bipolar Transistors Height 0.094" (2.38mm)  ON Semiconductor Bipolar Transistors Height 0.094" (2.38mm)   Length 0.264" (6.73mm)  ON Semiconductor Length 0.264" (6.73mm)  Bipolar Transistors Length 0.264" (6.73mm)  ON Semiconductor Bipolar Transistors Length 0.264" (6.73mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type DPAK  ON Semiconductor Package Type DPAK  Bipolar Transistors Package Type DPAK  ON Semiconductor Bipolar Transistors Package Type DPAK   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 15 W  ON Semiconductor Power Dissipation 15 W  Bipolar Transistors Power Dissipation 15 W  ON Semiconductor Bipolar Transistors Power Dissipation 15 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 8.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 8.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 8.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 8.3 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type PNP  ON Semiconductor Transistor Type PNP  Bipolar Transistors Transistor Type PNP  ON Semiconductor Bipolar Transistors Transistor Type PNP   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  ON Semiconductor Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  ON Semiconductor Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 1.2 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 1.2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.2 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.2 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V   Width 0.245" (6.22mm)  ON Semiconductor Width 0.245" (6.22mm)  Bipolar Transistors Width 0.245" (6.22mm)  ON Semiconductor Bipolar Transistors Width 0.245" (6.22mm)  
電話:400-900-3095
QQ:800152669
關(guān)于我們 | Amphenol簡介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應(yīng)用 | Amphenol動態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊 | 付款方式 | 聯(lián)系我們
Copyright © 2017 orender.cn All Rights Reserved. 技術(shù)支持:電子元器件 ICP備案證書號:粵ICP備11103613號