Brand/Series |
Transistor Series |
|
Configuration |
Common Base |
|
Current, Collector |
25 A |
|
Current, Gain |
75 |
|
Device Dissipation |
125 W |
|
Dimensions |
15.24 x 4.4 x 13.97 mm |
|
Frequency, Operating |
3 MHz |
|
Gain, DC Current, Maximum |
75 |
|
Gain, DC Current, Minimum |
15 |
|
Height |
0.55" (13.97mm) |
|
Length |
0.6" (15.24mm) |
|
Material |
Si |
|
Mounting Type |
Through Hole |
|
Number of Elements per Chip |
1 |
|
Number of Pins |
3 |
|
Package Type |
TO-218 |
|
Polarity |
NPN |
|
Power Dissipation |
125 W |
|
Primary Type |
Si |
|
Resistance, Thermal, Junction to Case |
1 °C/W |
|
Temperature, Junction, Operating |
-65 to 150 °C |
|
Temperature, Operating, Maximum |
+150 °C |
|
Temperature, Operating, Minimum |
-65 °C |
|
Temperature, Operating, Range |
-65 to +150 °C |
|
Thermal Resistance, Junction to Ambient |
35.7 °C⁄W |
|
Transistor Polarity |
NPN |
|
Transistor Type |
NPN |
|
Type |
Amplifier, Power |
|
Voltage, Breakdown, Collector to Emitter |
100 V |
|
Voltage, Collector to Base |
100 V |
|
Voltage, Collector to Emitter |
100 V |
|
Voltage, Collector to Emitter, Saturation |
4 V |
|
Voltage, Emitter to Base |
5 V |
|
Width |
0.173" (4.4mm) |
|
關(guān)鍵詞 |