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NTE377 - 

T-NPN SI PWR DRIVER PO

NTE Electronics, Inc. NTE377
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制造商產(chǎn)品編號(hào):
NTE377
倉(cāng)庫(kù)庫(kù)存編號(hào):
70215764
技術(shù)數(shù)據(jù)表:
View NTE377 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE377產(chǎn)品概述

Silicon Complementary Transistors

NTE377產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  10 A  
  Current, Gain  40  
  Dimensions  10.67 L x 15.49 H mm  
  Frequency, Operating  50 MHz  
  Gain, DC Current, Minimum  40  
  Height  0.61" (15.49mm)  
  Length  0.42" (10.67mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220  
  Polarity  NPN  
  Power Dissipation  50 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  2.5 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Amplifier, Driver  
  Voltage, Breakdown, Collector to Emitter  80 V  
  Voltage, Collector to Emitter  80 V  
  Voltage, Collector to Emitter, Saturation  1 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Saturation, Base to Emitter  1.5 V  
  Voltage, Saturation, Collector to Emitter  1 V (Max.)  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 10 A  NTE Electronics, Inc. Current, Collector 10 A  Bipolar Transistors Current, Collector 10 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 10 A   Current, Gain 40  NTE Electronics, Inc. Current, Gain 40  Bipolar Transistors Current, Gain 40  NTE Electronics, Inc. Bipolar Transistors Current, Gain 40   Dimensions 10.67 L x 15.49 H mm  NTE Electronics, Inc. Dimensions 10.67 L x 15.49 H mm  Bipolar Transistors Dimensions 10.67 L x 15.49 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 10.67 L x 15.49 H mm   Frequency, Operating 50 MHz  NTE Electronics, Inc. Frequency, Operating 50 MHz  Bipolar Transistors Frequency, Operating 50 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 50 MHz   Gain, DC Current, Minimum 40  NTE Electronics, Inc. Gain, DC Current, Minimum 40  Bipolar Transistors Gain, DC Current, Minimum 40  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 40   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  Bipolar Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  Bipolar Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.42" (10.67mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  Bipolar Transistors Package Type TO-220  NTE Electronics, Inc. Bipolar Transistors Package Type TO-220   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 50 W  NTE Electronics, Inc. Power Dissipation 50 W  Bipolar Transistors Power Dissipation 50 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 50 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 2.5 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 2.5 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 2.5 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 2.5 °C/W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, Driver  NTE Electronics, Inc. Type Amplifier, Driver  Bipolar Transistors Type Amplifier, Driver  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Driver   Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 80 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V   Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V   Voltage, Saturation, Collector to Emitter 1 V (Max.)  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1 V (Max.)  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1 V (Max.)  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1 V (Max.)  
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