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NTE248 - 

TRANSISTOR PNP SILICON DARLINGTON 100V IC=12A TO-3 CASE COMP'L TO NTE247

NTE Electronics, Inc. NTE248
聲明：圖片僅供參考，請以實物為準！
制造商產(chǎn)品編號：
NTE248
倉庫庫存編號：
70215977
技術(shù)數(shù)據(jù)表：
View NTE248 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

NTE248產(chǎn)品概述

Silicon Complementary Transistor Darlington Power Amplifier, PNP Transistor Type
  • Monolithic construction with built-in base-emitter shunt resistors
  • -65 to +200 °C operating temperature range
    Silicon complementary darlington transistor designed for general-purpose amplifier and low-frequency switching applications.

    • NTE248產(chǎn)品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  12 A  
      Current, Gain  100  
      Current, Output  12 A  
      Diameter  22.2 mm  
      Dimensions  22.2 Dia. x 8.89 H mm  
      Gain, DC Current, Maximum  18000  
      Gain, DC Current, Minimum  750  
      Height  0.35" (8.89mm)  
      Input Voltage  5 V  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-3  
      Polarity  PNP  
      Power Dissipation  150 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  1.17 °C⁄W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +200 °C  
      Transistor Polarity  PNP  
      Transistor Type  PNP  
      Type  Amplifier, Power  
      Voltage, Collector to Base  100 V  
      Voltage, Collector to Emitter  100 V  
      Voltage, Collector to Emitter, Saturation  3 V  
      Voltage, Emitter to Base  5 V  
      Voltage, Output  100 V  
      Voltage, Saturation, Base to Emitter  4 V  
      Voltage, Saturation, Collector to Emitter  2 V  
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    NTE248相關(guān)搜索

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Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity PNP  NTE Electronics, Inc. Transistor Polarity PNP  Bipolar Transistors Transistor Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity PNP   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Amplifier, Power  NTE Electronics, Inc. Type Amplifier, Power  Bipolar Transistors Type Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Power   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V  Bipolar Transistors Voltage, Output 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Output 100 V   Voltage, Saturation, Base to Emitter 4 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 4 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 4 V   Voltage, Saturation, Collector to Emitter 2 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 2 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 2 V  
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