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NTE2398 - 

POWER MOSFET N-CHANNEL 500V ID=4.5A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MO

NTE Electronics, Inc. NTE2398
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制造商產(chǎn)品編號(hào):
NTE2398
倉(cāng)庫(kù)庫(kù)存編號(hào):
70215910
技術(shù)數(shù)據(jù)表:
View NTE2398 Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫(kù)龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫(kù)數(shù)量,謝謝合作!

NTE2398產(chǎn)品概述

N-Channel Enhancement Mode MOSFET, 4.5 Amps, 74 Watts, -55°C to +150°C, M3 Screw Mounting
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • NTE2398產(chǎn)品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  610 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  4.5 A  
      Fall Time  16 ns (Typ.)  
      Gate Charge, Total  38 nC  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-220  
      Polarization  N-Channel  
      Power Dissipation  74 W  
      Resistance, Drain to Source On  1.5 Ω  
      Resistance, Thermal, Junction to Case  1.7 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  42 ns  
      Time, Turn-On Delay  8.2 ns  
      Transconductance, Forward  2.5 S  
      Typical Gate Charge @ Vgs  Maximum of 38 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  500 V  
      Voltage, Drain to Source  500 V  
      Voltage, Forward, Diode  1.6 V  
      Voltage, Gate to Source  ±20 V  
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    NTE2398相關(guān)搜索

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