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NTE2392 - 

POWER MOSFET N-CHANNEL 100V ID-33A TO-3CASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2392
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制造商產(chǎn)品編號：
NTE2392
倉庫庫存編號：
70215357
技術(shù)數(shù)據(jù)表：
View NTE2392 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE2392產(chǎn)品概述

N-Channel Enhancement Mode MOSFET, Continuous Drain Current 40 A @ +25 °C
  • Fast switching
  • Low drive current
  • Ease of paralleling
  • No second breakdown
  • Excellent temperature stability
    The NTE2392 is an N-Channel enhancement mode power MOSFET. Easy drive and very fast switching times make this device ideal for high speed switching applications.

    • NTE2392產(chǎn)品信息

      Application  Switching mode power supplies, uninterruptible power supplies and motor speed control  
      Brand/Series  MOSFET Series  
      Capacitance, Input  2000 pF @25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  40 A  
      Dimensions  22.2 (Dia) x 8.89 H mm  
      Fall Time  100 ns (Max.)  
      Gate Charge, Total  63 nC  
      Height  0.35" (8.89mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  2  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-3  
      Polarization  N-Channel  
      Power Dissipation  150 W  
      Resistance, Drain to Source On  0.055 Ω  
      Resistance, Thermal, Junction to Case  0.83 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  30 °C⁄W  
      Time, Turn-Off Delay  125 ns  
      Time, Turn-On Delay  35 ns  
      Transconductance, Forward  11 S  
      Typical Gate Charge @ Vgs  63 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  100 V  
      Voltage, Drain to Source  100 V  
      Voltage, Forward, Diode  2.5 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.874" (22.2mm) (Dia.)  
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    Application Switching mode power supplies, uninterruptible power supplies and motor speed control  NTE Electronics, Inc. Application Switching mode power supplies, uninterruptible power supplies and motor speed control  MOSFET Transistors Application Switching mode power supplies, uninterruptible power supplies and motor speed control  NTE Electronics, Inc. MOSFET Transistors Application Switching mode power supplies, uninterruptible power supplies and motor speed control   Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 2000 pF @25 V  NTE Electronics, Inc. Capacitance, Input 2000 pF @25 V  MOSFET Transistors Capacitance, Input 2000 pF @25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 2000 pF @25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 40 A  NTE Electronics, Inc. Current, Drain 40 A  MOSFET Transistors Current, Drain 40 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 40 A   Dimensions 22.2 (Dia) x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 (Dia) x 8.89 H mm  MOSFET Transistors Dimensions 22.2 (Dia) x 8.89 H mm  NTE Electronics, Inc. MOSFET Transistors Dimensions 22.2 (Dia) x 8.89 H mm   Fall Time 100 ns (Max.)  NTE Electronics, Inc. Fall Time 100 ns (Max.)  MOSFET Transistors Fall Time 100 ns (Max.)  NTE Electronics, Inc. MOSFET Transistors Fall Time 100 ns (Max.)   Gate Charge, Total 63 nC  NTE Electronics, Inc. Gate Charge, Total 63 nC  MOSFET Transistors Gate Charge, Total 63 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 63 nC   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  MOSFET Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.35" (8.89mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 2  NTE Electronics, Inc. Number of Pins 2  MOSFET Transistors Number of Pins 2  NTE Electronics, Inc. MOSFET Transistors Number of Pins 2   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  MOSFET Transistors Package Type TO-3  NTE Electronics, Inc. MOSFET Transistors Package Type TO-3   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 150 W  NTE Electronics, Inc. Power Dissipation 150 W  MOSFET Transistors Power Dissipation 150 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 150 W   Resistance, Drain to Source On 0.055 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.055 Ω  MOSFET Transistors Resistance, Drain to Source On 0.055 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.055 Ω   Resistance, Thermal, Junction to Case 0.83 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.83 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.83 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 0.83 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal 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Gate Charge @ Vgs 63 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs 63 nC @ 10 V   Voltage, Breakdown, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 100 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V   Voltage, Drain to Source 100 V  NTE Electronics, Inc. Voltage, Drain to Source 100 V  MOSFET Transistors Voltage, Drain to Source 100 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 100 V   Voltage, Forward, Diode 2.5 V  NTE Electronics, Inc. Voltage, Forward, Diode 2.5 V  MOSFET Transistors Voltage, Forward, Diode 2.5 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 2.5 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.874" (22.2mm) (Dia.)  NTE Electronics, Inc. Width 0.874" (22.2mm) (Dia.)  MOSFET Transistors Width 0.874" (22.2mm) (Dia.)  NTE Electronics, Inc. MOSFET Transistors Width 0.874" (22.2mm) (Dia.)  
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