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NTE2379 - 

POWER MOSFET N-CHANNEL 600V ID=6.2A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MO

NTE Electronics, Inc. NTE2379
聲明：圖片僅供參考，請以實物為準！
制造商產(chǎn)品編號：
NTE2379
倉庫庫存編號：
70214667
技術數(shù)據(jù)表：
View NTE2379 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

NTE2379產(chǎn)品概述

N-Channel MOSFET
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • NTE2379產(chǎn)品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  1300 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  6.2 A  
      Fall Time  20 ns  
      Gate Charge, Total  60 nC  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-220  
      Polarization  N-Channel  
      Power Dissipation  125 W  
      Resistance, Drain to Source On  1.2 Ω  
      Resistance, Thermal, Junction to Case  1 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  55 ns  
      Time, Turn-On Delay  32 ns  
      Transconductance, Forward  4.7 S  
      Typical Gate Charge @ Vgs  Maximum of 60 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  600 V  
      Voltage, Drain to Source  600 V  
      Voltage, Forward, Diode  1.5 V  
      Voltage, Gate to Source  ±20 V  
    關鍵詞         

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    NTE2379相關搜索

    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1300 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 1300 pF @ 25 V  MOSFET Transistors Capacitance, Input 1300 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1300 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 6.2 A  NTE Electronics, Inc. Current, Drain 6.2 A  MOSFET Transistors Current, Drain 6.2 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 6.2 A   Fall Time 20 ns  NTE Electronics, Inc. Fall Time 20 ns  MOSFET Transistors Fall Time 20 ns  NTE Electronics, Inc. MOSFET Transistors Fall Time 20 ns   Gate Charge, Total 60 nC  NTE Electronics, Inc. Gate Charge, Total 60 nC  MOSFET Transistors Gate Charge, Total 60 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 60 nC   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  MOSFET Transistors Power Dissipation 125 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 125 W   Resistance, Drain to Source On 1.2 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 1.2 Ω  MOSFET Transistors Resistance, Drain to Source On 1.2 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 1.2 Ω   Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 62 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W   Time, Turn-Off Delay 55 ns  NTE Electronics, Inc. Time, Turn-Off Delay 55 ns  MOSFET Transistors Time, Turn-Off Delay 55 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 55 ns   Time, Turn-On Delay 32 ns  NTE Electronics, Inc. Time, Turn-On Delay 32 ns  MOSFET Transistors Time, Turn-On Delay 32 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 32 ns   Transconductance, Forward 4.7 S  NTE Electronics, Inc. Transconductance, Forward 4.7 S  MOSFET Transistors Transconductance, Forward 4.7 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 4.7 S   Typical Gate Charge @ Vgs Maximum of 60 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 60 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 60 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 60 nC @ 10 V   Voltage, Breakdown, Drain to Source 600 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 600 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V   Voltage, Drain to Source 600 V  NTE Electronics, Inc. Voltage, Drain to Source 600 V  MOSFET Transistors Voltage, Drain to Source 600 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 600 V   Voltage, Forward, Diode 1.5 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.5 V  MOSFET Transistors Voltage, Forward, Diode 1.5 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.5 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
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