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NTE2322 - 

QUAD TRANSISTOR PNP SILICON 60V IC=0.6A14-LEAD DIP

NTE Electronics, Inc. NTE2322
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商產(chǎn)品編號(hào):
NTE2322
倉庫庫存編號(hào):
70215902
技術(shù)數(shù)據(jù)表:
View NTE2322 Datasheet Datasheet
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NTE2322產(chǎn)品概述

General Purpose Transistor, SOT-23 Package Type, 200 mAdc (Max.) Current Collector

NTE2322產(chǎn)品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  600 mA  
  Current, Gain  30  
  Device Dissipation  1.9 W  
  Dimensions  19.95 x 7.62 x 5.08 mm  
  Frequency, Operating  200 MHz  
  Gain, DC Current, Minimum  30  
  Height  0.2" (5.08mm)  
  Length  0.785" (19.95mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  14  
  Package Type  DIP-14  
  Polarity  PNP  
  Power Dissipation  1.9 W  
  Primary Type  Si  
  Temperature Range, Junction, Operating  -55 to 125 °C  
  Temperature, Operating, Maximum  +125 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +125 °C  
  Thermal Resistance, Junction to Ambient  66 °C⁄W  
  Transistor Polarity  PNP  
  Transistor Type  PNP  
  Type  General Purpose, Quad  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  60 V  
  Voltage, Collector to Emitter  40 V  
  Voltage, Collector to Emitter, Saturation  1.6 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Saturation, Base to Emitter  2.6 V  
  Voltage, Saturation, Collector to Emitter  1.6 V  
  Width  0.3" (7.62mm)  
關(guān)鍵詞         

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NTE2322相關(guān)搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 600 mA  NTE Electronics, Inc. Current, Collector 600 mA  Bipolar Transistors Current, Collector 600 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 600 mA   Current, Gain 30  NTE Electronics, Inc. Current, Gain 30  Bipolar Transistors Current, Gain 30  NTE Electronics, Inc. Bipolar Transistors Current, Gain 30   Device Dissipation 1.9 W  NTE Electronics, Inc. Device Dissipation 1.9 W  Bipolar Transistors Device Dissipation 1.9 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 1.9 W   Dimensions 19.95 x 7.62 x 5.08 mm  NTE Electronics, Inc. Dimensions 19.95 x 7.62 x 5.08 mm  Bipolar Transistors Dimensions 19.95 x 7.62 x 5.08 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 19.95 x 7.62 x 5.08 mm   Frequency, Operating 200 MHz  NTE Electronics, Inc. Frequency, Operating 200 MHz  Bipolar Transistors Frequency, Operating 200 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 200 MHz   Gain, DC Current, Minimum 30  NTE Electronics, Inc. Gain, DC Current, Minimum 30  Bipolar Transistors Gain, DC Current, Minimum 30  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 30   Height 0.2" (5.08mm)  NTE Electronics, Inc. Height 0.2" (5.08mm)  Bipolar Transistors Height 0.2" (5.08mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.2" (5.08mm)   Length 0.785" (19.95mm)  NTE Electronics, Inc. Length 0.785" (19.95mm)  Bipolar Transistors Length 0.785" (19.95mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.785" (19.95mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 14  NTE Electronics, Inc. Number of Pins 14  Bipolar Transistors Number of Pins 14  NTE Electronics, Inc. Bipolar Transistors Number of Pins 14   Package Type DIP-14  NTE Electronics, Inc. Package Type DIP-14  Bipolar Transistors Package Type DIP-14  NTE Electronics, Inc. Bipolar Transistors Package Type DIP-14   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 1.9 W  NTE Electronics, Inc. Power Dissipation 1.9 W  Bipolar Transistors Power Dissipation 1.9 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 1.9 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating -55 to 125 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -55 to 125 °C  Bipolar Transistors Temperature Range, Junction, Operating -55 to 125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -55 to 125 °C   Temperature, Operating, Maximum +125 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +125 °C  Bipolar Transistors Temperature, Operating, Maximum +125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +125 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +125 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +125 °C  Bipolar Transistors Temperature, Operating, Range -55 to +125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +125 °C   Thermal Resistance, Junction to Ambient 66 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 66 °C⁄W  Bipolar Transistors Thermal Resistance, Junction to Ambient 66 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 66 °C⁄W   Transistor Polarity PNP  NTE Electronics, Inc. Transistor Polarity PNP  Bipolar Transistors Transistor Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity PNP   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type General Purpose, Quad  NTE Electronics, Inc. Type General Purpose, Quad  Bipolar Transistors Type General Purpose, Quad  NTE Electronics, Inc. Bipolar Transistors Type General Purpose, Quad   Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V   Voltage, Collector to Base 60 V  NTE Electronics, Inc. Voltage, Collector to Base 60 V  Bipolar Transistors Voltage, Collector to Base 60 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 60 V   Voltage, Collector to Emitter 40 V  NTE Electronics, Inc. Voltage, Collector to Emitter 40 V  Bipolar Transistors Voltage, Collector to Emitter 40 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 40 V   Voltage, Collector to Emitter, Saturation 1.6 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.6 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Base to Emitter 2.6 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 2.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 2.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 2.6 V   Voltage, Saturation, Collector to Emitter 1.6 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.6 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.6 V   Width 0.3" (7.62mm)  NTE Electronics, Inc. Width 0.3" (7.62mm)  Bipolar Transistors Width 0.3" (7.62mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.3" (7.62mm)  
参考价格及参考库存
  日本1号仓库    仓库直销,订单金额100元起订,满300元含运,满500元含税运,有单就有优惠,量大更优惠,支持原厂订货
型号 制造商 描述 操作
NTE2322
[更多]
NTE Electronics Inc

Bipolar transistor

RoHS: Not Compliant | pbFree: No

搜索
  美国4号仓库    仓库直销,订单金额100元起订,满300元含运,满500元含税运,有单就有优惠,量大更优惠,支持原厂订货
型号 制造商 描述 操作
NTE2322
[更多]
NTE Electronics Inc

Trans GP BJT PNP 40V 0.6A 14-Pin DIP

搜索
  美国5号仓库    仓库直销,订单金额100元起订,满300元含运,满500元含税运,有单就有优惠,量大更优惠,支持原厂订货
型号 制造商 描述 操作
NTE2322
[更多]
NTE Electronics Inc  

搜索
  英国2号仓库    仓库直销,订单金额100元起订,满300元含运,满500元含税运,有单就有优惠,量大更优惠,支持原厂订货
型号 制造商 描述 操作
NTE2322
[更多]
NTE Electronics Inc

QUAD TRANSISTOR PNP SILICON 60V IC=0.6A14-LEAD DIP

RoHS: Not Compliant

搜索
查看资料
  英国8号仓库    仓库直销,订单金额100元起订,满300元含运,满500元含税运,有单就有优惠,量大更优惠,支持原厂订货
型号 制造商 描述 操作
NTE2322
[更多]
NTE Electronics Inc  

搜索
NTE2322
[更多]
NTE Electronics Inc  

搜索
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参考图片 型号/品牌 描述 / 技术参考 操作
NTE2322|NTE ELECTRONICSNTE2322
NTE ELECTRONICS
双极性晶体管 PNP 四路 -40V DIP
Rohs

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查价格库存
查看详细
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参考图片 制造商 / 说明 / 型号 / 仓库库存编号 PDF 操作

NTE Electronics, Inc. - NTE2322 - QUAD TRANSISTOR PNP SILICON 60V IC=0.6A14-LEAD DIP|70215902 | ChuangWei Electronics
NTE Electronics, Inc.
QUAD TRANSISTOR PNP SILICON 60V IC=0.6A14-LEAD DIP


型号:NTE2322
仓库库存编号:70215902

搜索
  www.szcwdz.cn    查看更多相关产品
参考图片 型号/品牌 描述 / 技术参考 操作
NTE2322|NTE ELECTRONICSNTE2322
NTE ELECTRONICS
双极性晶体管 PNP 四路 -40V DIP
Rohs

PDF下载 
查价格库存
查看详细
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