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NTE181 - 

TRANSISTOR NPN SILICON 100V 30AMP TO-3 CASE HIGH POWER AUDIO AMP

NTE Electronics, Inc. NTE181
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制造商產(chǎn)品編號:
NTE181
倉庫庫存編號:
70214676
技術(shù)數(shù)據(jù)表:
View NTE181 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE181產(chǎn)品概述

Silicon Power Transistor High Power Audio Amplifiers

NTE181產(chǎn)品信息

  Brand/Series  Transistor Series  
  Complement to  PNP  
  Configuration  Common Base  
  Current, Collector  30 A  
  Current, Continuous Collector  30 A  
  Current, Gain  25  
  Device Dissipation  200 W  
  Diameter  22.2 mm  
  Dimensions  22.2 Dia. x 8.89 H mm  
  Frequency, Operating  2 MHz  
  Gain, DC Current, Maximum  100  
  Gain, DC Current, Minimum  25 mA  
  Height  0.35" (8.89mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-3  
  Polarity  NPN  
  Power Dissipation  200 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.875 °C/W  
  Temperature Range, Junction, Operating  -65 to +200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Audio Amplifier, Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  0.8 V  
  Voltage, Emitter to Base  4 V  
  Voltage, Saturation, Base to Emitter  1.3 V  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 30 A  NTE Electronics, Inc. Current, Collector 30 A  Bipolar Transistors Current, Collector 30 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 30 A   Current, Continuous Collector 30 A  NTE Electronics, Inc. Current, Continuous Collector 30 A  Bipolar Transistors Current, Continuous Collector 30 A  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 30 A   Current, Gain 25  NTE Electronics, Inc. Current, Gain 25  Bipolar Transistors Current, Gain 25  NTE Electronics, Inc. Bipolar Transistors Current, Gain 25   Device Dissipation 200 W  NTE Electronics, Inc. Device Dissipation 200 W  Bipolar Transistors Device Dissipation 200 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 200 W   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Frequency, Operating 2 MHz  NTE Electronics, Inc. Frequency, Operating 2 MHz  Bipolar Transistors Frequency, Operating 2 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 2 MHz   Gain, DC Current, Maximum 100  NTE Electronics, Inc. Gain, DC Current, Maximum 100  Bipolar Transistors Gain, DC Current, Maximum 100  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 100   Gain, DC Current, Minimum 25 mA  NTE Electronics, Inc. Gain, DC Current, Minimum 25 mA  Bipolar Transistors Gain, DC Current, Minimum 25 mA  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 25 mA   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 200 W  NTE Electronics, Inc. Power Dissipation 200 W  Bipolar Transistors Power Dissipation 200 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 200 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.875 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.875 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W   Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to +200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  NTE Electronics, Inc. Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 0.8 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.8 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V   Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Voltage, Emitter to Base 4 V  Bipolar Transistors Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 4 V   Voltage, Saturation, Base to Emitter 1.3 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.3 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  
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