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NTE159M - 

TRANSISTOR PNP SILICON 60V IC 0.6A TO-18 LOW NOISEAUDIO AMP

NTE Electronics, Inc. NTE159M
聲明：圖片僅供參考，請以實物為準！
制造商產(chǎn)品編號：
NTE159M
倉庫庫存編號：
70215945
技術數(shù)據(jù)表：
View NTE159M Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

NTE159M產(chǎn)品概述

Silicon Complementary Transistor, PNP Transistor Type, 60 V Collector to Emitter Voltage
  • -65 to +200 °C operating temperature range
    Designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies.

    • NTE159M產(chǎn)品信息

      Bandwidth, Current Gain  200 MHz (Min.)  
      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  600 mA  
      Current, Gain  50  
      Diameter  5.84 mm  
      Dimensions  5.84 Dia. x 5.33 H mm  
      Frequency, Operating  200 MHz  
      Gain, DC Current, Maximum  300 @ IC ≥ 150 mA  
      Gain, DC Current, Minimum  100 @ IC ≥ 150 mA  
      Height  0.21" (5.33mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-18  
      Polarity  PNP  
      Power Dissipation  0.4 W  
      Primary Type  Si  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +200 °C  
      Transistor Type  PNP  
      Type  Audio Amplifier, Switch  
      Voltage, Breakdown, Collector to Emitter  60 V  
      Voltage, Collector to Base  60 V  
      Voltage, Collector to Emitter  60 V  
      Voltage, Collector to Emitter, Saturation  1.6 V  
      Voltage, Emitter to Base  5 V  
      Voltage, Saturation, Base to Emitter  2.6 V  
      Voltage, Saturation, Collector to Emitter  0.4 V @ IC ≥ 500 mA, IB ≥ 15 mA  
    關鍵詞         

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    NTE159M相關搜索

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