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NTE102A - 

TRANSISTOR PNP GERMANIUM 32V 1A TO-1 MEDIUM DRIVER

NTE Electronics, Inc. NTE102A
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制造商產(chǎn)品編號(hào):
NTE102A
倉(cāng)庫(kù)庫(kù)存編號(hào):
70214849
技術(shù)數(shù)據(jù)表:
View NTE102A Datasheet Datasheet
訂購(gòu)熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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NTE102A產(chǎn)品概述

Germanium Complementaryyy Transistors Medium Power Amplifier 650 mW (Max.) Power Dissipation
Designed for use as a medium power amplifier.

NTE102A產(chǎn)品信息

  Amplifier Type  Medium Power  
  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  1 A  
  Current, Gain  63  
  Diameter  6.09 mm  
  Dimensions  6.09 Dia. x 10.4 H mm  
  Frequency, Operating  2.3 MHz  
  Height  0.409" (10.4mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-1  
  Polarity  PNP  
  Power Dissipation  650 mW  
  Primary Type  Ge  
  Temperature, Operating, Maximum  +90 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +90 °C  
  Transistor Polarity  PNP  
  Transistor Type  PNP  
  Type  Amplifier, Power  
  Voltage, Collector to Base  32 V  
  Voltage, Collector to Emitter  10 V  
  Voltage, Collector to Emitter, Saturation  0.17 V  
  Voltage, Emitter to Base  10 V  
  Voltage, Saturation, Collector to Emitter  0.17 V  
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NTE102A相關(guān)搜索

Amplifier Type Medium Power  NTE Electronics, Inc. Amplifier Type Medium Power  Bipolar Transistors Amplifier Type Medium Power  NTE Electronics, Inc. Bipolar Transistors Amplifier Type Medium Power   Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 1 A  NTE Electronics, Inc. Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 1 A   Current, Gain 63  NTE Electronics, Inc. Current, Gain 63  Bipolar Transistors Current, Gain 63  NTE Electronics, Inc. Bipolar Transistors Current, Gain 63   Diameter 6.09 mm  NTE Electronics, Inc. Diameter 6.09 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Type Ge  NTE Electronics, Inc. Bipolar Transistors Primary Type Ge   Temperature, Operating, Maximum +90 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +90 °C  Bipolar Transistors Temperature, Operating, Maximum +90 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +90 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +90 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +90 °C  Bipolar Transistors Temperature, Operating, Range -55 to +90 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +90 °C   Transistor Polarity PNP  NTE Electronics, Inc. Transistor Polarity PNP  Bipolar Transistors Transistor Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity PNP   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Amplifier, Power  NTE Electronics, Inc. Type Amplifier, Power  Bipolar Transistors Type Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Power   Voltage, Collector to Base 32 V  NTE Electronics, Inc. Voltage, Collector to Base 32 V  Bipolar Transistors Voltage, Collector to Base 32 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 32 V   Voltage, Collector to Emitter 10 V  NTE Electronics, Inc. Voltage, Collector to Emitter 10 V  Bipolar Transistors Voltage, Collector to Emitter 10 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 10 V   Voltage, Collector to Emitter, Saturation 0.17 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.17 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.17 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.17 V   Voltage, Emitter to Base 10 V  NTE Electronics, Inc. Voltage, Emitter to Base 10 V  Bipolar Transistors Voltage, Emitter to Base 10 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 10 V   Voltage, Saturation, Collector to Emitter 0.17 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.17 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.17 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.17 V  
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