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IRLIB9343PBF
IRLIB9343PBF -
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 93Milliohms; ID -14A; TO-220 Full-Pak; PD 33W
聲明:圖片僅供參考,請(qǐng)以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號(hào):
IRLIB9343PBF
倉庫庫存編號(hào):
70017098
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請(qǐng)與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRLIB9343PBF產(chǎn)品概述
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
IRLIB9343PBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
660 pF @ -50 V
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Current, Drain
-10 A
Dimensions
10.63 x 4.83 x 16.12 mm
Gate Charge, Total
31 nC
Height
0.635" (16.12mm)
Length
0.418" (10.63mm)
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220
Polarization
P-Channel
Power Dissipation
33 W
Resistance, Drain to Source On
170 mΩ
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-40 °C
Temperature, Operating, Range
-40 to +175 °C
Time, Turn-Off Delay
21 ns
Time, Turn-On Delay
9.5 ns
Transconductance, Forward
5.3 S
Typical Gate Charge @ Vgs
31 nC @ -10 V
Voltage, Breakdown, Drain to Source
-55 V
Voltage, Drain to Source
-55 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate to Source
± 20 V
Width
0.19" (4.83mm)
關(guān)鍵詞
IRLIB9343PBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 660 pF @ -50 V
International Rectifier Capacitance, Input 660 pF @ -50 V
MOSFET Transistors Capacitance, Input 660 pF @ -50 V
International Rectifier MOSFET Transistors Capacitance, Input 660 pF @ -50 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type P
International Rectifier Channel Type P
MOSFET Transistors Channel Type P
International Rectifier MOSFET Transistors Channel Type P
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain -10 A
International Rectifier Current, Drain -10 A
MOSFET Transistors Current, Drain -10 A
International Rectifier MOSFET Transistors Current, Drain -10 A
Dimensions 10.63 x 4.83 x 16.12 mm
International Rectifier Dimensions 10.63 x 4.83 x 16.12 mm
MOSFET Transistors Dimensions 10.63 x 4.83 x 16.12 mm
International Rectifier MOSFET Transistors Dimensions 10.63 x 4.83 x 16.12 mm
Gate Charge, Total 31 nC
International Rectifier Gate Charge, Total 31 nC
MOSFET Transistors Gate Charge, Total 31 nC
International Rectifier MOSFET Transistors Gate Charge, Total 31 nC
Height 0.635" (16.12mm)
International Rectifier Height 0.635" (16.12mm)
MOSFET Transistors Height 0.635" (16.12mm)
International Rectifier MOSFET Transistors Height 0.635" (16.12mm)
Length 0.418" (10.63mm)
International Rectifier Length 0.418" (10.63mm)
MOSFET Transistors Length 0.418" (10.63mm)
International Rectifier MOSFET Transistors Length 0.418" (10.63mm)
Mounting Type Through Hole
International Rectifier Mounting Type Through Hole
MOSFET Transistors Mounting Type Through Hole
International Rectifier MOSFET Transistors Mounting Type Through Hole
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type TO-220
International Rectifier Package Type TO-220
MOSFET Transistors Package Type TO-220
International Rectifier MOSFET Transistors Package Type TO-220
Polarization P-Channel
International Rectifier Polarization P-Channel
MOSFET Transistors Polarization P-Channel
International Rectifier MOSFET Transistors Polarization P-Channel
Power Dissipation 33 W
International Rectifier Power Dissipation 33 W
MOSFET Transistors Power Dissipation 33 W
International Rectifier MOSFET Transistors Power Dissipation 33 W
Resistance, Drain to Source On 170 mΩ
International Rectifier Resistance, Drain to Source On 170 mΩ
MOSFET Transistors Resistance, Drain to Source On 170 mΩ
International Rectifier MOSFET Transistors Resistance, Drain to Source On 170 mΩ
Temperature, Operating, Maximum +175 °C
International Rectifier Temperature, Operating, Maximum +175 °C
MOSFET Transistors Temperature, Operating, Maximum +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C
Temperature, Operating, Minimum -40 °C
International Rectifier Temperature, Operating, Minimum -40 °C
MOSFET Transistors Temperature, Operating, Minimum -40 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -40 °C
Temperature, Operating, Range -40 to +175 °C
International Rectifier Temperature, Operating, Range -40 to +175 °C
MOSFET Transistors Temperature, Operating, Range -40 to +175 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -40 to +175 °C
Time, Turn-Off Delay 21 ns
International Rectifier Time, Turn-Off Delay 21 ns
MOSFET Transistors Time, Turn-Off Delay 21 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 21 ns
Time, Turn-On Delay 9.5 ns
International Rectifier Time, Turn-On Delay 9.5 ns
MOSFET Transistors Time, Turn-On Delay 9.5 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 9.5 ns
Transconductance, Forward 5.3 S
International Rectifier Transconductance, Forward 5.3 S
MOSFET Transistors Transconductance, Forward 5.3 S
International Rectifier MOSFET Transistors Transconductance, Forward 5.3 S
Typical Gate Charge @ Vgs 31 nC @ -10 V
International Rectifier Typical Gate Charge @ Vgs 31 nC @ -10 V
MOSFET Transistors Typical Gate Charge @ Vgs 31 nC @ -10 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 31 nC @ -10 V
Voltage, Breakdown, Drain to Source -55 V
International Rectifier Voltage, Breakdown, Drain to Source -55 V
MOSFET Transistors Voltage, Breakdown, Drain to Source -55 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source -55 V
Voltage, Drain to Source -55 V
International Rectifier Voltage, Drain to Source -55 V
MOSFET Transistors Voltage, Drain to Source -55 V
International Rectifier MOSFET Transistors Voltage, Drain to Source -55 V
Voltage, Forward, Diode -1.2 V
International Rectifier Voltage, Forward, Diode -1.2 V
MOSFET Transistors Voltage, Forward, Diode -1.2 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.2 V
Voltage, Gate to Source ± 20 V
International Rectifier Voltage, Gate to Source ± 20 V
MOSFET Transistors Voltage, Gate to Source ± 20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ± 20 V
Width 0.19" (4.83mm)
International Rectifier Width 0.19" (4.83mm)
MOSFET Transistors Width 0.19" (4.83mm)
International Rectifier MOSFET Transistors Width 0.19" (4.83mm)
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sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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