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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRFP2907PBF

IRFP2907PBF -

MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 4.5Milliohms; ID 209A; TO-247AC; PD 470W; -55de

International Rectifier IRFP2907PBF

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International Rectifier

制造商：: International Rectifier International Rectifier
制造商產品編號：: IRFP2907PBF
倉庫庫存編號：: 70017037
技術數據表：: Datasheet

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

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IRFP2907PBF產品概述

N-Channel Power MOSFET over 100A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

IRFP2907PBF相關搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 13000 pF @ 25 V International Rectifier Capacitance, Input 13000 pF @ 25 V MOSFET Transistors Capacitance, Input 13000 pF @ 25 V International Rectifier MOSFET Transistors Capacitance, Input 13000 pF @ 25 V Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type N International Rectifier Channel Type N MOSFET Transistors Channel Type N International Rectifier MOSFET Transistors Channel Type N Configuration Single International Rectifier Configuration Single MOSFET Transistors Configuration Single International Rectifier MOSFET Transistors Configuration Single Current, Drain 209 A International Rectifier Current, Drain 209 A MOSFET Transistors Current, Drain 209 A International Rectifier MOSFET Transistors Current, Drain 209 A Dimensions 15.87 x 5.31 x 20.70 mm International Rectifier Dimensions 15.87 x 5.31 x 20.70 mm MOSFET Transistors Dimensions 15.87 x 5.31 x 20.70 mm International Rectifier MOSFET Transistors Dimensions 15.87 x 5.31 x 20.70 mm Gate Charge, Total 410 nC International Rectifier Gate Charge, Total 410 nC MOSFET Transistors Gate Charge, Total 410 nC International Rectifier MOSFET Transistors Gate Charge, Total 410 nC Height 0.815" (20.7mm) International Rectifier Height 0.815" (20.7mm) MOSFET Transistors Height 0.815" (20.7mm) International Rectifier MOSFET Transistors Height 0.815" (20.7mm) Length 0.625" <5/8> (15.875mm) International Rectifier Length 0.625" <5/8> (15.875mm) MOSFET Transistors Length 0.625" <5/8> (15.875mm) International Rectifier MOSFET Transistors Length 0.625" <5/8> (15.875mm) Mounting Type Through Hole International Rectifier Mounting Type Through Hole MOSFET Transistors Mounting Type Through Hole International Rectifier MOSFET Transistors Mounting Type Through Hole Number of Elements per Chip 1 International Rectifier Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 International Rectifier MOSFET Transistors Number of Elements per Chip 1 Number of Pins 3 International Rectifier Number of Pins 3 MOSFET Transistors Number of Pins 3 International Rectifier MOSFET Transistors Number of Pins 3 Package Type TO-247AC International Rectifier Package Type TO-247AC MOSFET Transistors Package Type TO-247AC International Rectifier MOSFET Transistors Package Type TO-247AC Polarization N-Channel International Rectifier Polarization N-Channel MOSFET Transistors Polarization N-Channel International Rectifier MOSFET Transistors Polarization N-Channel Power Dissipation 470 W International Rectifier Power Dissipation 470 W MOSFET Transistors Power Dissipation 470 W International Rectifier MOSFET Transistors Power Dissipation 470 W Resistance, Drain to Source On 4.5 mΩ International Rectifier Resistance, Drain to Source On 4.5 mΩ MOSFET Transistors Resistance, Drain to Source On 4.5 mΩ International Rectifier MOSFET Transistors Resistance, Drain to Source On 4.5 mΩ Temperature, Operating, Maximum +175 °C International Rectifier Temperature, Operating, Maximum +175 °C MOSFET Transistors Temperature, Operating, Maximum +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +175 °C International Rectifier Temperature, Operating, Range -55 to +175 °C MOSFET Transistors Temperature, Operating, Range -55 to +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C Time, Turn-Off Delay 130 ns International Rectifier Time, Turn-Off Delay 130 ns MOSFET Transistors Time, Turn-Off Delay 130 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 130 ns Time, Turn-On Delay 23 ns International Rectifier Time, Turn-On Delay 23 ns MOSFET Transistors Time, Turn-On Delay 23 ns International Rectifier MOSFET Transistors Time, Turn-On Delay 23 ns Transconductance, Forward 130 S International Rectifier Transconductance, Forward 130 S MOSFET Transistors Transconductance, Forward 130 S International Rectifier MOSFET Transistors Transconductance, Forward 130 S Typical Gate Charge @ Vgs 410 nC @ 10 V International Rectifier Typical Gate Charge @ Vgs 410 nC @ 10 V MOSFET Transistors Typical Gate Charge @ Vgs 410 nC @ 10 V International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 410 nC @ 10 V Voltage, Breakdown, Drain to Source 75 V International Rectifier Voltage, Breakdown, Drain to Source 75 V MOSFET Transistors Voltage, Breakdown, Drain to Source 75 V International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 75 V Voltage, Drain to Source 75 V International Rectifier Voltage, Drain to Source 75 V MOSFET Transistors Voltage, Drain to Source 75 V International Rectifier MOSFET Transistors Voltage, Drain to Source 75 V Voltage, Forward, Diode 1.3 V International Rectifier Voltage, Forward, Diode 1.3 V MOSFET Transistors Voltage, Forward, Diode 1.3 V International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V Voltage, Gate to Source ± 20 V International Rectifier Voltage, Gate to Source ± 20 V MOSFET Transistors Voltage, Gate to Source ± 20 V International Rectifier MOSFET Transistors Voltage, Gate to Source ± 20 V Width 0.209" (5.31mm) International Rectifier Width 0.209" (5.31mm) MOSFET Transistors Width 0.209" (5.31mm) International Rectifier MOSFET Transistors Width 0.209" (5.31mm)

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