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IRF7478TRPBF
IRF7478TRPBF -
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 20 Milliohms; ID 7A; SO-8; PD 2.5W; VGS +/-20V
聲明:圖片僅供參考,請以實(shí)物為準(zhǔn)!
制造商:
International Rectifier
International Rectifier
制造商產(chǎn)品編號:
IRF7478TRPBF
倉庫庫存編號:
70017717
技術(shù)數(shù)據(jù)表:
Datasheet
訂購熱線:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大,部分產(chǎn)品信息可能未能及時(shí)更新,下單前請與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量,謝謝合作!
IRF7478TRPBF產(chǎn)品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRF7478TRPBF產(chǎn)品信息
Brand/Series
HEXFET Series
Capacitance, Input
1740 pF @ 25 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Quad Drain, Triple Source
Current, Drain
7 A
Dimensions
5.00 x 4.00 x 1.50 mm
Gate Charge, Total
21 nC
Height
0.059" (1.5mm)
Length
0.196" (5mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
8
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain to Source On
30 mΩ
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
44 ns
Time, Turn-On Delay
7.7 ns
Transconductance, Forward
17 S
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Voltage, Breakdown, Drain to Source
60 V
Voltage, Drain to Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate to Source
±20 V
Width
0.157" (4mm)
關(guān)鍵詞
IRF7478TRPBF客戶還搜索了
參考圖片
制造商 / 說明 / 型號 / 倉庫庫存編號
PDF
操作
VCC (Visual Communications Company)
Indicator, PCB, LED, T 3/4, Red, 2.2 V, 5 mcd
型號:
5370T1
倉庫庫存編號:
70129923
搜索
VCC (Visual Communications Company)
Indicator, PCB, LED, T 3/4, Red, 2.2 V, 5 mcd
型號:
5370T1
倉庫庫存編號:
70129923
搜索
IRF7478TRPBF相關(guān)搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1740 pF @ 25 V
International Rectifier Capacitance, Input 1740 pF @ 25 V
MOSFET Transistors Capacitance, Input 1740 pF @ 25 V
International Rectifier MOSFET Transistors Capacitance, Input 1740 pF @ 25 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Quad Drain, Triple Source
International Rectifier Configuration Quad Drain, Triple Source
MOSFET Transistors Configuration Quad Drain, Triple Source
International Rectifier MOSFET Transistors Configuration Quad Drain, Triple Source
Current, Drain 7 A
International Rectifier Current, Drain 7 A
MOSFET Transistors Current, Drain 7 A
International Rectifier MOSFET Transistors Current, Drain 7 A
Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm
MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm
Gate Charge, Total 21 nC
International Rectifier Gate Charge, Total 21 nC
MOSFET Transistors Gate Charge, Total 21 nC
International Rectifier MOSFET Transistors Gate Charge, Total 21 nC
Height 0.059" (1.5mm)
International Rectifier Height 0.059" (1.5mm)
MOSFET Transistors Height 0.059" (1.5mm)
International Rectifier MOSFET Transistors Height 0.059" (1.5mm)
Length 0.196" (5mm)
International Rectifier Length 0.196" (5mm)
MOSFET Transistors Length 0.196" (5mm)
International Rectifier MOSFET Transistors Length 0.196" (5mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 8
International Rectifier Number of Pins 8
MOSFET Transistors Number of Pins 8
International Rectifier MOSFET Transistors Number of Pins 8
Package Type SO-8
International Rectifier Package Type SO-8
MOSFET Transistors Package Type SO-8
International Rectifier MOSFET Transistors Package Type SO-8
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 2.5 W
International Rectifier Power Dissipation 2.5 W
MOSFET Transistors Power Dissipation 2.5 W
International Rectifier MOSFET Transistors Power Dissipation 2.5 W
Resistance, Drain to Source On 30 mΩ
International Rectifier Resistance, Drain to Source On 30 mΩ
MOSFET Transistors Resistance, Drain to Source On 30 mΩ
International Rectifier MOSFET Transistors Resistance, Drain to Source On 30 mΩ
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 44 ns
International Rectifier Time, Turn-Off Delay 44 ns
MOSFET Transistors Time, Turn-Off Delay 44 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 44 ns
Time, Turn-On Delay 7.7 ns
International Rectifier Time, Turn-On Delay 7.7 ns
MOSFET Transistors Time, Turn-On Delay 7.7 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 7.7 ns
Transconductance, Forward 17 S
International Rectifier Transconductance, Forward 17 S
MOSFET Transistors Transconductance, Forward 17 S
International Rectifier MOSFET Transistors Transconductance, Forward 17 S
Typical Gate Charge @ Vgs 21 nC @ 4.5 V
International Rectifier Typical Gate Charge @ Vgs 21 nC @ 4.5 V
MOSFET Transistors Typical Gate Charge @ Vgs 21 nC @ 4.5 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 21 nC @ 4.5 V
Voltage, Breakdown, Drain to Source 60 V
International Rectifier Voltage, Breakdown, Drain to Source 60 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V
Voltage, Drain to Source 60 V
International Rectifier Voltage, Drain to Source 60 V
MOSFET Transistors Voltage, Drain to Source 60 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 60 V
Voltage, Forward, Diode 1.3 V
International Rectifier Voltage, Forward, Diode 1.3 V
MOSFET Transistors Voltage, Forward, Diode 1.3 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V
Voltage, Gate to Source ±20 V
International Rectifier Voltage, Gate to Source ±20 V
MOSFET Transistors Voltage, Gate to Source ±20 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V
Width 0.157" (4mm)
International Rectifier Width 0.157" (4mm)
MOSFET Transistors Width 0.157" (4mm)
International Rectifier MOSFET Transistors Width 0.157" (4mm)
郵箱:
sales@szcwdz.com
Q Q:
800152669
手機(jī)網(wǎng)站:
m.szcwdz.com
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