amphenol代理商
專業(yè)銷售Amphenol（安費諾）全系列產(chǎn)品-英國2號倉庫
美國1號分類選型新加坡2號分類選型英國10號分類選型英國2號分類選型日本5號分類選型

在本站結(jié)果里搜索：    
熱門搜索詞:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

IRF7105TRPBF - 

IRF7105TRPBF Dual N/P-channel MOSFET Transistor, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC

International Rectifier IRF7105TRPBF
聲明：圖片僅供參考，請以實物為準！
制造商產(chǎn)品編號：
IRF7105TRPBF
倉庫庫存編號：
70018873
技術數(shù)據(jù)表：
View IRF7105TRPBF Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時更新，下單前請與銷售人員確認好實時在庫數(shù)量，謝謝合作！

IRF7105TRPBF產(chǎn)品概述

Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

IRF7105TRPBF產(chǎn)品信息

  Brand/Series  HEXFET Series  
  Capacitance, Input  290 pF @ -15 V (P), 330 pF @ 15 V (N)  
  Channel Mode  Enhancement  
  Channel Type  N, P  
  Configuration  Dual Drain  
  Current, Drain  -2.3 (P), 3.5 (N) A  
  Dimensions  5.00 x 4.00 x 1.50 mm  
  Height  0.059" (1.5mm)  
  Length  0.196" (5mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  2  
  Number of Pins  8  
  Package Type  SO-8  
  Power Dissipation  2 W  
  Resistance, Drain to Source On  0.16 (N), 0.40 (P) Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  45 ns  
  Time, Turn-On Delay  12 (P), 7 (N) ns  
  Transconductance, Forward  3.1 (P), 4.3 (N) sec  
  Typical Gate Charge @ Vgs  10 nC @ -10 V (P), 9.4 nC @ 10 V (N)  
  Voltage, Drain to Source  -25 (P), 25 (N) V  
  Voltage, Forward, Diode  -1.2 (P), 1.2 (N) V  
  Voltage, Gate to Source  ±20 V  
  Width  0.157" (4mm)  
關鍵詞         

IRF7105TRPBF相關搜索

Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N)  International Rectifier Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N)  MOSFET Transistors Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N)  International Rectifier MOSFET Transistors Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N)   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  International Rectifier Channel Type N, P  MOSFET Transistors Channel Type N, P  International Rectifier MOSFET Transistors Channel Type N, P   Configuration Dual Drain  International Rectifier Configuration Dual Drain  MOSFET Transistors Configuration Dual Drain  International Rectifier MOSFET Transistors Configuration Dual Drain   Current, Drain -2.3 (P), 3.5 (N) A  International Rectifier Current, Drain -2.3 (P), 3.5 (N) A  MOSFET Transistors Current, Drain -2.3 (P), 3.5 (N) A  International Rectifier MOSFET Transistors Current, Drain -2.3 (P), 3.5 (N) A   Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm  MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm   Height 0.059" (1.5mm)  International Rectifier Height 0.059" (1.5mm)  MOSFET Transistors Height 0.059" (1.5mm)  International Rectifier MOSFET Transistors Height 0.059" (1.5mm)   Length 0.196" (5mm)  International Rectifier Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  International Rectifier MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  International Rectifier Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  International Rectifier MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  International Rectifier Number of Pins 8  MOSFET Transistors Number of Pins 8  International Rectifier MOSFET Transistors Number of Pins 8   Package Type SO-8  International Rectifier Package Type SO-8  MOSFET Transistors Package Type SO-8  International Rectifier MOSFET Transistors Package Type SO-8   Power Dissipation 2 W  International Rectifier Power Dissipation 2 W  MOSFET Transistors Power Dissipation 2 W  International Rectifier MOSFET Transistors Power Dissipation 2 W   Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω  International Rectifier Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω  MOSFET Transistors Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 45 ns  International Rectifier Time, Turn-Off Delay 45 ns  MOSFET Transistors Time, Turn-Off Delay 45 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns   Time, Turn-On Delay 12 (P), 7 (N) ns  International Rectifier Time, Turn-On Delay 12 (P), 7 (N) ns  MOSFET Transistors Time, Turn-On Delay 12 (P), 7 (N) ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 12 (P), 7 (N) ns   Transconductance, Forward 3.1 (P), 4.3 (N) sec  International Rectifier Transconductance, Forward 3.1 (P), 4.3 (N) sec  MOSFET Transistors Transconductance, Forward 3.1 (P), 4.3 (N) sec  International Rectifier MOSFET Transistors Transconductance, Forward 3.1 (P), 4.3 (N) sec   Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N)  International Rectifier Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N)  MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N)  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N)   Voltage, Drain to Source -25 (P), 25 (N) V  International Rectifier Voltage, Drain to Source -25 (P), 25 (N) V  MOSFET Transistors Voltage, Drain to Source -25 (P), 25 (N) V  International Rectifier MOSFET Transistors Voltage, Drain to Source -25 (P), 25 (N) V   Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  International Rectifier Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V  International Rectifier MOSFET Transistors Voltage, Forward, Diode -1.2 (P), 1.2 (N) V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  International Rectifier Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  International Rectifier MOSFET Transistors Width 0.157" (4mm)  
電話:400-900-3095
QQ:800152669
關于我們 | Amphenol簡介 | Amphenol產(chǎn)品 | Amphenol產(chǎn)品應用 | Amphenol動態(tài) | 按系列選型 | 按產(chǎn)品規(guī)格選型 | Amphenol選型手冊 | 付款方式 | 聯(lián)系我們
Copyright © 2017 orender.cn All Rights Reserved. 技術支持：電子元器件 ICP備案證書號:粵ICP備11103613號