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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> IRF1310NPBF

IRF1310NPBF -

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.036Ohm; ID 42A; TO-220AB; PD 160W; VGS +/-20V

International Rectifier IRF1310NPBF

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International Rectifier

制造商：: International Rectifier International Rectifier
制造商產(chǎn)品編號：: IRF1310NPBF
倉庫庫存編號：: 70016939
技術(shù)數(shù)據(jù)表：: Datasheet

訂購熱線： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

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IRF1310NPBF產(chǎn)品概述

N-Channel Power MOSFET 40A to 49A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

IRF1310NPBF相關(guān)搜索

Brand/Series HEXFET Series International Rectifier Brand/Series HEXFET Series MOSFET Transistors Brand/Series HEXFET Series International Rectifier MOSFET Transistors Brand/Series HEXFET Series Capacitance, Input 1900 pF @ 25 V International Rectifier Capacitance, Input 1900 pF @ 25 V MOSFET Transistors Capacitance, Input 1900 pF @ 25 V International Rectifier MOSFET Transistors Capacitance, Input 1900 pF @ 25 V Channel Mode Enhancement International Rectifier Channel Mode Enhancement MOSFET Transistors Channel Mode Enhancement International Rectifier MOSFET Transistors Channel Mode Enhancement Channel Type N International Rectifier Channel Type N MOSFET Transistors Channel Type N International Rectifier MOSFET Transistors Channel Type N Configuration Single International Rectifier Configuration Single MOSFET Transistors Configuration Single International Rectifier MOSFET Transistors Configuration Single Current, Drain 42 A International Rectifier Current, Drain 42 A MOSFET Transistors Current, Drain 42 A International Rectifier MOSFET Transistors Current, Drain 42 A Dimensions 10.54 x 4.69 x 15.24 mm International Rectifier Dimensions 10.54 x 4.69 x 15.24 mm MOSFET Transistors Dimensions 10.54 x 4.69 x 15.24 mm International Rectifier MOSFET Transistors Dimensions 10.54 x 4.69 x 15.24 mm Gate Charge, Total 110 nC International Rectifier Gate Charge, Total 110 nC MOSFET Transistors Gate Charge, Total 110 nC International Rectifier MOSFET Transistors Gate Charge, Total 110 nC Height 0.6" (15.24mm) International Rectifier Height 0.6" (15.24mm) MOSFET Transistors Height 0.6" (15.24mm) International Rectifier MOSFET Transistors Height 0.6" (15.24mm) Length 0.414" (10.54mm) International Rectifier Length 0.414" (10.54mm) MOSFET Transistors Length 0.414" (10.54mm) International Rectifier MOSFET Transistors Length 0.414" (10.54mm) Mounting Type Through Hole International Rectifier Mounting Type Through Hole MOSFET Transistors Mounting Type Through Hole International Rectifier MOSFET Transistors Mounting Type Through Hole Number of Elements per Chip 1 International Rectifier Number of Elements per Chip 1 MOSFET Transistors Number of Elements per Chip 1 International Rectifier MOSFET Transistors Number of Elements per Chip 1 Number of Pins 3 International Rectifier Number of Pins 3 MOSFET Transistors Number of Pins 3 International Rectifier MOSFET Transistors Number of Pins 3 Package Type TO-220AB International Rectifier Package Type TO-220AB MOSFET Transistors Package Type TO-220AB International Rectifier MOSFET Transistors Package Type TO-220AB Polarization N-Channel International Rectifier Polarization N-Channel MOSFET Transistors Polarization N-Channel International Rectifier MOSFET Transistors Polarization N-Channel Power Dissipation 160 W International Rectifier Power Dissipation 160 W MOSFET Transistors Power Dissipation 160 W International Rectifier MOSFET Transistors Power Dissipation 160 W Resistance, Drain to Source On 0.036 Ω International Rectifier Resistance, Drain to Source On 0.036 Ω MOSFET Transistors Resistance, Drain to Source On 0.036 Ω International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.036 Ω Temperature, Operating, Maximum +175 °C International Rectifier Temperature, Operating, Maximum +175 °C MOSFET Transistors Temperature, Operating, Maximum +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C Temperature, Operating, Minimum -55 °C International Rectifier Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C Temperature, Operating, Range -55 to +175 °C International Rectifier Temperature, Operating, Range -55 to +175 °C MOSFET Transistors Temperature, Operating, Range -55 to +175 °C International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C Time, Turn-Off Delay 45 ns International Rectifier Time, Turn-Off Delay 45 ns MOSFET Transistors Time, Turn-Off Delay 45 ns International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns Time, Turn-On Delay 45 ns International Rectifier Time, Turn-On Delay 45 ns MOSFET Transistors Time, Turn-On Delay 45 ns International Rectifier MOSFET Transistors Time, Turn-On Delay 45 ns Transconductance, Forward 14 S International Rectifier Transconductance, Forward 14 S MOSFET Transistors Transconductance, Forward 14 S International Rectifier MOSFET Transistors Transconductance, Forward 14 S Typical Gate Charge @ Vgs Maximum of 110 nC @ 10 V International Rectifier Typical Gate Charge @ Vgs Maximum of 110 nC @ 10 V MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 110 nC @ 10 V International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 110 nC @ 10 V Voltage, Breakdown, Drain to Source 100 V International Rectifier Voltage, Breakdown, Drain to Source 100 V MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 100 V Voltage, Drain to Source 100 V International Rectifier Voltage, Drain to Source 100 V MOSFET Transistors Voltage, Drain to Source 100 V International Rectifier MOSFET Transistors Voltage, Drain to Source 100 V Voltage, Forward, Diode 1.3 V International Rectifier Voltage, Forward, Diode 1.3 V MOSFET Transistors Voltage, Forward, Diode 1.3 V International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V Voltage, Gate to Source ±20 V International Rectifier Voltage, Gate to Source ±20 V MOSFET Transistors Voltage, Gate to Source ±20 V International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V Width 0.185" (4.69mm) International Rectifier Width 0.185" (4.69mm) MOSFET Transistors Width 0.185" (4.69mm) International Rectifier MOSFET Transistors Width 0.185" (4.69mm)

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