2SK725產(chǎn)品概述
N-Channel Silicon Power MOSFET, 125 W Power Dissipation, 130 ns Time Turn-On
High speed switching Low on-resistance No secondary breakdown
F-I Series = Low RDS(ON)F-II Series = VGS ±30 V, Reduced Turn Off TimeFAP-II Series = High Avalanche RuggednessFAP-III = Logic Level, High Avalanche RuggednessFAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 VFAP-IIA = Reduced Turn Off TimeFAP-IIIBH = High Speed Non LogicFAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 VFAP-G = Ultra Fast Switching
F-I Series = Low RDS(ON)F-II Series = VGS ±30 V, Reduced Turn Off TimeFAP-II Series = High Avalanche RuggednessFAP-III = Logic Level, High Avalanche RuggednessFAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 VFAP-IIA = Reduced Turn Off TimeFAP-IIIBH = High Speed Non LogicFAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 VFAP-G = Ultra Fast Switching