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2SK3875-01 - 

MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 0.79Ohm; ID 13A; TO-247; PD 355W; VGS +/-30V

Fuji Semiconductor 2SK3875-01
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制造商產(chǎn)品編號:
2SK3875-01
倉庫庫存編號:
70212498
技術(shù)數(shù)據(jù)表:
View 2SK3875-01 Datasheet Datasheet
訂購熱線: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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2SK3875-01產(chǎn)品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
  • 2SK3875-01產(chǎn)品信息

      Capacitance, Input  1750 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  13 A  
      Dimensions  15.5 x 5 x 21.5 mm  
      Gate Charge, Total  46 nC  
      Height  0.846" (21.5mm)  
      Length  0.61" (15.5mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-247  
      Polarization  N-Channel  
      Power Dissipation  355 W  
      Resistance, Drain to Source On  1 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  60 ns  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  12 S  
      Typical Gate Charge @ Vgs  46 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  900 V  
      Voltage, Drain to Source  900 V  
      Voltage, Forward, Diode  1.1 V  
      Voltage, Gate to Source  ±30 V  
      Width  0.197" (5mm)  
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    2SK3875-01相關(guān)搜索

    Capacitance, Input 1750 pF @ 25 V  Fuji Semiconductor Capacitance, Input 1750 pF @ 25 V  MOSFET Transistors Capacitance, Input 1750 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 1750 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain 13 A  Fuji Semiconductor Current, Drain 13 A  MOSFET Transistors Current, Drain 13 A  Fuji Semiconductor MOSFET Transistors Current, Drain 13 A   Dimensions 15.5 x 5 x 21.5 mm  Fuji Semiconductor Dimensions 15.5 x 5 x 21.5 mm  MOSFET Transistors Dimensions 15.5 x 5 x 21.5 mm  Fuji Semiconductor MOSFET Transistors Dimensions 15.5 x 5 x 21.5 mm   Gate Charge, Total 46 nC  Fuji Semiconductor Gate Charge, Total 46 nC  MOSFET Transistors Gate Charge, Total 46 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 46 nC   Height 0.846" (21.5mm)  Fuji Semiconductor Height 0.846" (21.5mm)  MOSFET Transistors Height 0.846" (21.5mm)  Fuji Semiconductor MOSFET Transistors Height 0.846" (21.5mm)   Length 0.61" (15.5mm)  Fuji Semiconductor Length 0.61" (15.5mm)  MOSFET Transistors Length 0.61" (15.5mm)  Fuji Semiconductor MOSFET Transistors Length 0.61" (15.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-247  Fuji Semiconductor Package Type TO-247  MOSFET Transistors Package Type TO-247  Fuji Semiconductor MOSFET Transistors Package Type TO-247   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 355 W  Fuji Semiconductor Power Dissipation 355 W  MOSFET Transistors Power Dissipation 355 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 355 W   Resistance, Drain to Source On 1 Ω  Fuji Semiconductor Resistance, Drain to Source On 1 Ω  MOSFET Transistors Resistance, Drain to Source On 1 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 1 Ω   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 60 ns  Fuji Semiconductor Time, Turn-Off Delay 60 ns  MOSFET Transistors Time, Turn-Off Delay 60 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 60 ns   Time, Turn-On Delay 20 ns  Fuji Semiconductor Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 12 S  Fuji Semiconductor Transconductance, Forward 12 S  MOSFET Transistors Transconductance, Forward 12 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 12 S   Typical Gate Charge @ Vgs 46 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 46 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 46 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 46 nC @ 10 V   Voltage, Breakdown, Drain to Source 900 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 900 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 900 V   Voltage, Drain to Source 900 V  Fuji Semiconductor Voltage, Drain to Source 900 V  MOSFET Transistors Voltage, Drain to Source 900 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 900 V   Voltage, Forward, Diode 1.1 V  Fuji Semiconductor Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.197" (5mm)  Fuji Semiconductor Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Fuji Semiconductor MOSFET Transistors Width 0.197" (5mm)  
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